[CST-2] VLSI

Anthony Jones amj30@cam.ac.uk
Tue, 4 Jun 2002 22:06:00 +0100


Page 16 of the VLSI notes, the CMOS gate matrix: At the top there's a
p-type diffusion, with breaks in it where there are p-type transistors with
their gates tied high:

MMMMMMMMMMMMMMMMMMMM  <- Metal
    M  P  M             
DDDDMDDPDDMDDDDDDDDD  <- Diffusion (p-type)
       P
       ^
       |
       \---------------- Polysilicon (causing break in diffusion)

But then the diffusion is connected to the power line on both sides of the
p-type transistors, meaning that the break caused by the p-type transistor
is effectively pointless, and you could do away with it entirely...

Or am I missing something?

Ant

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