[CST-2] VLSI
Anthony Jones
amj30@cam.ac.uk
Tue, 4 Jun 2002 22:06:00 +0100
Page 16 of the VLSI notes, the CMOS gate matrix: At the top there's a
p-type diffusion, with breaks in it where there are p-type transistors with
their gates tied high:
MMMMMMMMMMMMMMMMMMMM <- Metal
M P M
DDDDMDDPDDMDDDDDDDDD <- Diffusion (p-type)
P
^
|
\---------------- Polysilicon (causing break in diffusion)
But then the diffusion is connected to the power line on both sides of the
p-type transistors, meaning that the break caused by the p-type transistor
is effectively pointless, and you could do away with it entirely...
Or am I missing something?
Ant
--
The obligatory bit about my email address:
This account will be closed on July 15th 2002.
Please use ant@cantab.net